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Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration ( 10%) GeSn on insulator enhanced by weak laser irradiation | 4 |
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Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration ( 10%) GeSn on insulator enhanced by weak laser irradiation | 1 | 0 | 1 | 2 | 0 | 0 | 0 |
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